H. Nienhaus, T.U. Kampen, and W. Mönch, Phonons in 3C-, 4H-, and 6H-SiC,
Surf. Sci. 324 (1995) L328.
R.F. Schmitsdorf, T.U. Kampen, and W. Mönch, Correlation Between Barrier Height and Interface Structure of Ag/Si(111)
Schottky Contacts,
Surf. Sci. 324 (1995) 249.
T.U. Kampen, R. Schmitsdorf, and W. Mönch, Silver Schottky Contacts on Si(111):H-1x1 Surfaces Prepared by Wet
Chemical Etching,
Appl. Phys. A 60 (1995) 391.
H. Nienhaus and W. Mönch, Surface Phonons in InP(110),
Surf. Sci. 328 (1995) L561.
W. Mönch, R. Schmitsdorf, T.U. Kampen, and A. Stockhausen, Interlayer-Induced Dipoles in Schottky Contacts,
in Proc. 22nd Int'l Conf. on the Physics of Semiconductors,
ed. by D.J. Lockwood (World Scientific, Singapore, 1995), p. 576.
W. Mönch, Semiconductor Surfaces and Interfaces, 2nd Edition,
Springer Series on Surface Science Vol. 26 (Springer, Berlin, 1995).
T.U. Kampen and W. Mönch, Lead Contacts on Si(111):H-1x1 Surfaces,
Surf. Sci. 331-333 (1995) 490.
S. Rossi Salmagne and W. Mönch, Growth of AlN Films on Ga- and As-Rich GaAs(001) Surfaces,
Surf. Sci. 331-333 (1995) 937.
W. Mönch, Schottky Contacts on Ternary Compound Semiconductors: Compositional
Variations of Barrier Heights,
Appl. Phys. Lett. 67 (1995) 2209.
W. Mönch, Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor
Contacts,
Mat. Res. Soc. Symp. Proc. 378 (1995) 811.
V. van Elsbergen, T.U. Kampen, and W. Mönch, Electronic Properties of Cesium on 6H-SiC Surfaces,
J. Appl. Phys. 79 (1996) 316.
W. Mönch, Chemical Trends of Barrier Heights in Metal-Semiconductor Contacts:
On the Theory of the Slope Parameter,
Appl. Surf. Sci. 92 (1996) 367.
H. Nienhaus and W. Mönch, Fluorine Adsorption on GaAs(110) Surfaces and the Onset of Etching
After XeF2 Exposures,
Appl. Surf. Sci. 104/105 (1996) 95.
S. Grabowski, H. Nienhaus, and W. Mönch, Bending and Stretching Vibrations of Hydrogen and Deuterium at GaAs(110)
Surfaces,
Appl. Surf. Sci. 352-354 (1996).
R.F. Schmitsdorf and W. Mönch, Oxidation of Silver-Passivated Si(111):Ag-(3½ x 3½)R30°
Surfaces,
Appl. Surf. Sci. 352-354 (1996) 322.
W.Mönch, Electronic Properties of Ideal and Interface-modified Metal-Semiconductor
Contacts,
J. Vac. Sci. Technol. B 14 (1996) 2985.
V. van Elsbergen, T.U. Kampen, and W. Mönch, Surface Analysis of 6H-SiC,
Surf. Sci. 365 (1996) 443.
O. Janzen, V. van Elsbergen, and W. Mönch, Oxidation of Beta-SiC(100) Surfaces at Room Temperature,
in Proc. 23rd Int´l Conf. on the Physics of Semiconductors,
ed. by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996),
p. 915.
T.U. Kampen and W. Mönch, Trends of Schottky Barriers in Metal-GaN(0001) Contacts,
in Proc. 23rd Int´l Conf. on the Physics of Semiconductors,
ed. by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996),
p. 995.
W. Mönch, Empirical Tight-binding Calculation of the Branch-point Energies of
the Continuum of Interface-induced Gap States,
J. Appl. Phys. 80 (1996) 5076.
H. Nienhaus, S.P. Grabowski, and W. Mönch, Vibrational Modes of Hydrogen and Deuterium at InP(110) Surfaces,
Surf. Sci. 368 (1996) 196.
T.U. Kampen and W. Mönch, Metal Contacts on Alpha-GaN,
Mat. Res. Soc. Internet J. Nitride Semicond. Res. 1 (1996) #41.
W. Mönch, Hydrogen-modification of Electronic Surface, Bulk, and Interface Properties
of Silicon,
phys. stat. sol. (b) 159 (1997) 25.
H. Nienhaus, S.P. Grabowski, and W. Mönch, Hydrogen Stretching-vibrations at GaAs(110) and InP(110) Surfaces:
An Electron Energy-loss Fine-structure Study,
phys. stat. sol. (b) 159 (1997) 175.
W. Mönch, Elementary Calculation of the Branch Points in the Continuum of Interface-induced
Gap States,
Appl. Surf. Sci. 117-118 (1997) 380.
T.U. Kampen and W. Mönch, Barrier Heights of GaN Schottky Contacts,
Appl. Surf. Sci. 117-118 (1997) 388.
V. van Elsbergen, O. Janzen, and W. Mönch, Oxidation of Clean and H-terminated SiC Surfaces,
Mat. Sci. Eng. B 46 (1997) 366.
R.F. Schmitsdorf, T.U. Kampen, and W. Mönch, Explanation of the Linear Correlation between Barrier Heights and Ideality
Factors of Real Metal-Semiconductor Contacts by Laterally Nonuniform Schottky
Barriers,
J. Vac. Sci. Technol. B 15 (1997) 1221.
W. Mönch, Calculation of Valence-band Offsets of Lattice-matched GaInTlP/InP
Heterostructures and of Schottky Barrier Heights of Metal-GaInTlP Contacts,
Appl. Phys.Lett. 71 (1997) 1231.
T.U. Kampen, M. Eyckeler, and W. Mönch, Electronic Properties of Cesium-covered GaN(0001) Surfaces,
Appl. Surf. Sci. 123-124 (1998) 28.
S.P. Grabowski, T.U. Kampen, H. Nienhaus, and W. Mönch, Vibrational Properties of GaN(0001) Surfaces,
Appl. Surf. Sci. 123/124 (1998) 33.
V. van Elsbergen, H. Nienhaus, and W. Mönch, Dynamical Properties of 3C- 4H, and 6H-SiC Surfaces,
Appl. Surf. Sci. 123/124 (1998) 38.
W. Mönch, Comment on "A Study of Barrier Height in Au-AlxGa1-xN
Schottky Diodes in the Range 0 <= x <= 0.2" by M.R.H. Khan, H. Nakayama,
T. Detchprohm, K. Hiramatsu, and N. Sawaki in Solid-St. Electronics 41,
287 (1997),
Solid-State Electron. 42 (1998) 470.
V. van Elsbergen, H. Nienhaus, and W. Mönch, Deposition of Cs on Graphitized 4H-SiC Surfaces,
Materials Sci. Forum 264-268 (1998) 335.
W. Mönch, Valence-band Offsets and Schottky Barrier Heights of Layered Semiconductors
Explained by Interface-induced Gap States,
Appl. Phys.Lett. 72 (1998) 1899.
M. Eyckler, W.Mönch, T.U. Kampen, R. Dimitrov, O.Ambacher,
and M. Stutzmann, Negative electron affinity of cesiated p-GaN(001) surfaces,
J. Vac. Sci. Technol. B 16 (1998) 2224.
V. van Elsbergen, M. Rohleder, and W. Mönch, Formation of nitride layers on 6H-SiC surfaces,
Appl. Surf. Sci. 134 (1998) 197.
V. van Elsbergen, M. Rohleder, and W. Mönch, Interaction of nitrogen with 6H-SiC surfaces,
Mat. Res. Soc. Symp. Proc. 512 (1998) 457.
O. Janzen, Ch. Hahn, T.U. Kampen, and W. Mönch, Explanation of multiplet spots in low-energy electron diffraction patterns of clean GaN{0001}
surfaces,
Eur. Phys. J. B 7 (1999) 1.
R.F. Schmitsdorf and W. Mönch, Influence of the interface structure on the barrier height of homogeneous
Pb/n-Si(111) Schottky contacts,
Eur. Phys. J. B 7 (1999) 457.
O. Janzen and W. Mönch, Valence-band discontinuity at the C60/Si(111)-7x7 interface,
J. Phys. Condens. Matter 11 (1999) L111.
H. Nienhaus, V. van Elsbergen, and W. Mönch, Vibrations at 3C-SiC(001)-3x2 surfaces,
Euro Phys. J. B 9 (1999) 179.
O. Janzen, Ch. Hahn, and W. Mönch, Oxidation of GaN{0001}-1x1 surfaces at room temperature,
Euro Phys. J. B 9 (1999) 315.
O. Janzen and W. Mönch, Comment on "Initial stages of nitridation of Si(111) surfaces: X-ray
photoelectron spectroscopy and scanning tunneling microscopy study"
by M. Tabe and T. Yamamoto [Surf. Sci. 376 (1997) 99],
Surf. Sci. 431 (1999) 278.
W. Mönch, 125 years metal-semiconductor contacts: Where do we stand?
Advances in Solid State Physics39 (1999) 13.
W. Mönch, Barrier heights of real Schottky contacts explained by metal-induced
gap states and lateral inhomogeneities,
J. Vac. Sci. Technol. B 17 (1999) 1867.
H. Werheit, R. Schmechel, U. Kuhlmann, T.U. Kampen,
W. Mönch, and A. Rau, On The reliability of the Raman spectra of boron-rich compounds,
J. Alloys Comp. 291 (1999) 28.
S. J. Weyers, O. Janzen, and W. Mönch, The Schottky barrier height of cesium on n-Si(111)-7x7 surfaces,
J. Phys.: Condens. Matter 11 (1999) 8489.
S.P. Grabowski, H. Nienhaus, and W. Mönch, Vibrational and electronic excitations at GaN{0001} surfaces,
Surf. Sci. 454-456 (2000) 498
S. P. Grabowski, H. Nienhaus, and W. Mönch, HREELS investigation of hydrogenated and deuterated GaN{0001} surfaces,
Eur. Phys. J. B 16 (2000) 3.
H. Nienhaus, Carsten Schepers, S.P. Grabowski, and W. Mönch, Improved thermal stability of GaN{0001} surfaces by adsorbed C60 molecules,
Appl. Phys. Lett. 77 (2000) 403.
S.P. Grabowski, M. Schneider, H. Nienhaus, and W. Mönch, Electron affinity of AlxGa1-xN(0001) surfaces
Appl. Phys. Lett. 78 (2001) 2503.
W. Mönch, Semiconductor Surfaces and Interfaces, 3rd Edition,
Springer Series on Surface Science Vol. 26 (Springer, Berlin, 2001).
H. Nienhaus, M. Schneider, S.P. Grabowski, W. Mönch, R. Dimitrov, O. Ambacher,
and M. Stutzmann, Ionization energy and electron affinity of clean and oxidized
AlxGa1-xN(0001) surfaces,
Mat. Res. Soc. Symp. Proc. 680 (2001) E4.5.
W. Mönch, The Continuum of Interface-Induced Gap States - The Unifying Concept of the
band Lineup at Semiconductore Interfaces - Application to Silicon Carbide,
in Silicon Carbide, Recent Major Advances, ed. by W.J. Choyke,
H. Matsunami, and G. Pensi (Springer, Berlin, 2004), p. 317
W. Mönch, Electronic Properties of Semiconductor Interfaces,
Springer Series in Surface Science Vol. 43 (Springer, Berlin, 2004)
R. Schmechel, H. Werheit, T.U.Kampen, and W.Mönch, Photoluminescence of boron carbide,
J. Sol. State Chem. 177 (2004) 566-568
W. Mönch On the band structure lineup at interfaces of SiO2,
Si3N4, and high-κ dielectrics,
Appl. Phys. Lett. 86, 122101 (2005)
W. Mönch On the band structure lineup of ZnO heterostructures,
Appl. Phys. Lett. 86, 162101 (2005)
W. Mönch Band Structure Lineup at I-III-VI2 Schottky
Contacts and Heterostructures, in Wide-Gap Chalcopyrites, edited by S. Siebentritt and U.Rau
(Springer, Berlin 2006), p.9
W. Mönch Slope parameters of the barrier heights of metal-organic contacts,
Appl. Phys. Lett. 88, 112116 (2006)
W. Mönch Electronic Properties of Semiconductor Interfaces,
in Springer Handbook of Electronic and Photonic Materials,
edited by S. Kasap and P.Capper (Springer, Berlin 2006), p. 147
W. Mönch Comment on "Band gap and band offset of (GaIn)(PSb) lattice matched
to InP"
[Appl. Phys. Lett. 87, 032102 (2005)]
Appl. Phys. Lett. 89, 126101 (2006)
W. Mönch Some comments on the determination and interpretation of barrier heights of
metal-semiconductor contacts
Appl. Phys. A 87, 359-366 (2007)
Winfried Mönch On the electric-dipole contribution to the valence-band offsets
in semiconductor-oxide heterostructures
Appl. Phys. Lett. 91, 042117 (2007)
W. Mönch On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states
Appl. Phys. Lett. 93, 172118 (2008)
W. Mönch Interface-induced gap states and band-structure lineup at TiO2 heterostructures and Schottky cantacts
J. Appl. Phys. 107, 013706 (2010).
Winfried Mönch, Branch-point energies and the band-structure lineup at Schottky contacts and heterostructures.
J. Appl Phys. 109, 114724 (2011).
Winfried Mönch, On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts
J. Appl Phys. 111, 073706 (2012).
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