Laboratorium für Festkörperphysik Arbeitsgruppe Prof. Dr. Winfried Mönch

Publikationen seit 1995      ( 1995   1996   1997   1998   1999   2000   2001 2004   2005   2006   2007   2008   2010   2011   2012 )

• H. Nienhaus, T.U. Kampen, and W. Mönch,
  Phonons in 3C-, 4H-, and 6H-SiC,
  Surf. Sci. 324 (1995) L328.

• R.F. Schmitsdorf, T.U. Kampen, and W. Mönch,
  Correlation Between Barrier Height and Interface Structure of Ag/Si(111) Schottky Contacts,
  Surf. Sci. 324 (1995) 249.

• T.U. Kampen, R. Schmitsdorf, and W. Mönch,
  Silver Schottky Contacts on Si(111):H-1x1 Surfaces Prepared by Wet Chemical Etching,
  Appl. Phys. A 60 (1995) 391.

• H. Nienhaus and W. Mönch,
  Surface Phonons in InP(110),
  Surf. Sci. 328 (1995) L561.

• W. Mönch, R. Schmitsdorf, T.U. Kampen, and A. Stockhausen,
  Interlayer-Induced Dipoles in Schottky Contacts,
  in Proc. 22nd Int'l Conf. on the Physics of Semiconductors, ed. by D.J. Lockwood (World Scientific, Singapore, 1995), p. 576.

• W. Mönch,
  Semiconductor Surfaces and Interfaces, 2nd Edition,
  Springer Series on Surface Science Vol. 26 (Springer, Berlin, 1995).

• T.U. Kampen and W. Mönch,
  Lead Contacts on Si(111):H-1x1 Surfaces,
  Surf. Sci. 331-333 (1995) 490.

• S. Rossi Salmagne and W. Mönch,
  Growth of AlN Films on Ga- and As-Rich GaAs(001) Surfaces,
  Surf. Sci. 331-333 (1995) 937.

• W. Mönch,
  Schottky Contacts on Ternary Compound Semiconductors: Compositional Variations of Barrier Heights,
  Appl. Phys. Lett. 67 (1995) 2209.

• W. Mönch,
  Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor Contacts,
  Mat. Res. Soc. Symp. Proc. 378 (1995) 811.

• V. van Elsbergen, T.U. Kampen, and W. Mönch,
  Electronic Properties of Cesium on 6H-SiC Surfaces,
  J. Appl. Phys. 79 (1996) 316.

• W. Mönch,
  Chemical Trends of Barrier Heights in Metal-Semiconductor Contacts: On the Theory of the Slope Parameter,
  Appl. Surf. Sci. 92 (1996) 367.

• H. Nienhaus and W. Mönch,
  Fluorine Adsorption on GaAs(110) Surfaces and the Onset of Etching After XeF₂ Exposures,
  Appl. Surf. Sci. 104/105 (1996) 95.

• S. Grabowski, H. Nienhaus, and W. Mönch,
  Bending and Stretching Vibrations of Hydrogen and Deuterium at GaAs(110) Surfaces,
  Appl. Surf. Sci. 352-354 (1996).

• R.F. Schmitsdorf and W. Mönch,
  Oxidation of Silver-Passivated Si(111):Ag-(3^½ x 3^½)R30° Surfaces,
  Appl. Surf. Sci. 352-354 (1996) 322.

• W.Mönch,
  Electronic Properties of Ideal and Interface-modified Metal-Semiconductor Contacts,
  J. Vac. Sci. Technol. B 14 (1996) 2985.

• V. van Elsbergen, T.U. Kampen, and W. Mönch,
  Surface Analysis of 6H-SiC,
  Surf. Sci. 365 (1996) 443.

• O. Janzen, V. van Elsbergen, and W. Mönch,
  Oxidation of Beta-SiC(100) Surfaces at Room Temperature,
  in Proc. 23rd Int´l Conf. on the Physics of Semiconductors, ed. by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 915.

• T.U. Kampen and W. Mönch,
  Trends of Schottky Barriers in Metal-GaN(0001) Contacts,
  in Proc. 23rd Int´l Conf. on the Physics of Semiconductors, ed. by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 995.

• W. Mönch,
  Empirical Tight-binding Calculation of the Branch-point Energies of the Continuum of Interface-induced Gap States,
  J. Appl. Phys. 80 (1996) 5076.

• H. Nienhaus, S.P. Grabowski, and W. Mönch,
  Vibrational Modes of Hydrogen and Deuterium at InP(110) Surfaces,
  Surf. Sci. 368 (1996) 196.

• T.U. Kampen and W. Mönch,
  Metal Contacts on Alpha-GaN,
  Mat. Res. Soc. Internet J. Nitride Semicond. Res. 1 (1996) #41.

• W. Mönch,
  Hydrogen-modification of Electronic Surface, Bulk, and Interface Properties of Silicon,
  phys. stat. sol. (b) 159 (1997) 25.

• H. Nienhaus, S.P. Grabowski, and W. Mönch,
  Hydrogen Stretching-vibrations at GaAs(110) and InP(110) Surfaces: An Electron Energy-loss Fine-structure Study,
  phys. stat. sol. (b) 159 (1997) 175.

• W. Mönch,
  Elementary Calculation of the Branch Points in the Continuum of Interface-induced Gap States,
  Appl. Surf. Sci. 117-118 (1997) 380.

• T.U. Kampen and W. Mönch,
  Barrier Heights of GaN Schottky Contacts,
  Appl. Surf. Sci. 117-118 (1997) 388.

• V. van Elsbergen, O. Janzen, and W. Mönch,
  Oxidation of Clean and H-terminated SiC Surfaces,
  Mat. Sci. Eng. B 46 (1997) 366.

• R.F. Schmitsdorf, T.U. Kampen, and W. Mönch,
  Explanation of the Linear Correlation between Barrier Heights and Ideality Factors of Real Metal-Semiconductor Contacts by Laterally Nonuniform Schottky Barriers,
  J. Vac. Sci. Technol. B 15 (1997) 1221.

• W. Mönch,
  Calculation of Valence-band Offsets of Lattice-matched GaInTlP/InP Heterostructures and of Schottky Barrier Heights of Metal-GaInTlP Contacts,
  Appl. Phys.Lett. 71 (1997) 1231.

• T.U. Kampen, M. Eyckeler, and W. Mönch,
  Electronic Properties of Cesium-covered GaN(0001) Surfaces,
  Appl. Surf. Sci. 123-124 (1998) 28.

• S.P. Grabowski, T.U. Kampen, H. Nienhaus, and W. Mönch,
  Vibrational Properties of GaN(0001) Surfaces,
  Appl. Surf. Sci. 123/124 (1998) 33.

• V. van Elsbergen, H. Nienhaus, and W. Mönch,
  Dynamical Properties of 3C- 4H, and 6H-SiC Surfaces,
  Appl. Surf. Sci. 123/124 (1998) 38.

• W. Mönch,
  Comment on "A Study of Barrier Height in Au-Al_xGa_1-xN Schottky Diodes in the Range 0 <= x <= 0.2" by M.R.H. Khan, H. Nakayama, T. Detchprohm, K. Hiramatsu, and N. Sawaki in Solid-St. Electronics 41, 287 (1997),
  Solid-State Electron. 42 (1998) 470.

• V. van Elsbergen, H. Nienhaus, and W. Mönch,
  Deposition of Cs on Graphitized 4H-SiC Surfaces,
  Materials Sci. Forum 264-268 (1998) 335.

• W. Mönch,
  Valence-band Offsets and Schottky Barrier Heights of Layered Semiconductors Explained by Interface-induced Gap States,
  Appl. Phys.Lett. 72 (1998) 1899.

• M. Eyckler, W.Mönch, T.U. Kampen, R. Dimitrov, O.Ambacher, and M. Stutzmann,
  Negative electron affinity of cesiated p-GaN(001) surfaces,
  J. Vac. Sci. Technol. B 16 (1998) 2224.

• V. van Elsbergen, M. Rohleder, and W. Mönch,
  Formation of nitride layers on 6H-SiC surfaces,
  Appl. Surf. Sci. 134 (1998) 197.

• V. van Elsbergen, M. Rohleder, and W. Mönch,
  Interaction of nitrogen with 6H-SiC surfaces,
  Mat. Res. Soc. Symp. Proc. 512 (1998) 457.

• O. Janzen, Ch. Hahn, T.U. Kampen, and W. Mönch,
  Explanation of multiplet spots in low-energy electron diffraction patterns of clean GaN{0001} surfaces,
  Eur. Phys. J. B 7 (1999) 1.

• R.F. Schmitsdorf and W. Mönch,
  Influence of the interface structure on the barrier height of homogeneous Pb/n-Si(111) Schottky contacts,
  Eur. Phys. J. B 7 (1999) 457.

• O. Janzen and W. Mönch,
  Valence-band discontinuity at the C₆₀/Si(111)-7x7 interface,
  J. Phys. Condens. Matter 11 (1999) L111.

• H. Nienhaus, V. van Elsbergen, and W. Mönch,
  Vibrations at 3C-SiC(001)-3x2 surfaces,
  Euro Phys. J. B 9 (1999) 179.

• O. Janzen, Ch. Hahn, and W. Mönch,
  Oxidation of GaN{0001}-1x1 surfaces at room temperature,
  Euro Phys. J. B 9 (1999) 315.

• O. Janzen and W. Mönch,
  Comment on "Initial stages of nitridation of Si(111) surfaces: X-ray photoelectron spectroscopy and scanning tunneling microscopy study" by M. Tabe and T. Yamamoto [Surf. Sci. 376 (1997) 99],
  Surf. Sci. 431 (1999) 278.

• W. Mönch,
  125 years metal-semiconductor contacts: Where do we stand?
  Advances in Solid State Physics39 (1999) 13.

• W. Mönch,
  Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities,
  J. Vac. Sci. Technol. B 17 (1999) 1867.

• H. Werheit, R. Schmechel, U. Kuhlmann, T.U. Kampen, W. Mönch, and A. Rau,
  On The reliability of the Raman spectra of boron-rich compounds,
  J. Alloys Comp. 291 (1999) 28.

• S. J. Weyers, O. Janzen, and W. Mönch,
  The Schottky barrier height of cesium on n-Si(111)-7x7 surfaces,
  J. Phys.: Condens. Matter 11 (1999) 8489.

• S.P. Grabowski, H. Nienhaus, and W. Mönch,
  Vibrational and electronic excitations at GaN{0001} surfaces,
  Surf. Sci. 454-456 (2000) 498

• S. P. Grabowski, H. Nienhaus, and W. Mönch,
  HREELS investigation of hydrogenated and deuterated GaN{0001} surfaces,
  Eur. Phys. J. B 16 (2000) 3.

• H. Nienhaus, Carsten Schepers, S.P. Grabowski, and W. Mönch,
  Improved thermal stability of GaN{0001} surfaces by adsorbed C₆₀ molecules,
  Appl. Phys. Lett. 77 (2000) 403.

• S.P. Grabowski, M. Schneider, H. Nienhaus, and W. Mönch,
  Electron affinity of Al_xGa_1-xN(0001) surfaces
  Appl. Phys. Lett. 78 (2001) 2503.

• W. Mönch,
  Semiconductor Surfaces and Interfaces, 3rd Edition,
  Springer Series on Surface Science Vol. 26 (Springer, Berlin, 2001).

• H. Nienhaus, M. Schneider, S.P. Grabowski, W. Mönch, R. Dimitrov, O. Ambacher, and M. Stutzmann,
  Ionization energy and electron affinity of clean and oxidized Al_xGa_1-xN(0001) surfaces,
  Mat. Res. Soc. Symp. Proc. 680 (2001) E4.5.

• W. Mönch,
  The Continuum of Interface-Induced Gap States - The Unifying Concept of the band Lineup at Semiconductore Interfaces - Application to Silicon Carbide,
  in Silicon Carbide, Recent Major Advances, ed. by W.J. Choyke, H. Matsunami, and G. Pensi (Springer, Berlin, 2004), p. 317

• W. Mönch,
  Electronic Properties of Semiconductor Interfaces,
  Springer Series in Surface Science Vol. 43 (Springer, Berlin, 2004)

• R. Schmechel, H. Werheit, T.U.Kampen, and W.Mönch,
  Photoluminescence of boron carbide,
  J. Sol. State Chem. 177 (2004) 566-568

• W. Mönch
  On the band structure lineup at interfaces of SiO₂, Si₃N₄, and high-κ dielectrics,
  Appl. Phys. Lett. 86, 122101 (2005)

• W. Mönch
  On the band structure lineup of ZnO heterostructures,
  Appl. Phys. Lett. 86, 162101 (2005)

• W. Mönch
  Band Structure Lineup at I-III-VI₂ Schottky Contacts and Heterostructures,
  in Wide-Gap Chalcopyrites, edited by S. Siebentritt and U.Rau (Springer, Berlin 2006), p.9

• W. Mönch
  Slope parameters of the barrier heights of metal-organic contacts,
  Appl. Phys. Lett. 88, 112116 (2006)

• W. Mönch
  Electronic Properties of Semiconductor Interfaces,
  in Springer Handbook of Electronic and Photonic Materials,
  edited by S. Kasap and P.Capper (Springer, Berlin 2006), p. 147

• W. Mönch
  Comment on "Band gap and band offset of (GaIn)(PSb) lattice matched to InP"
  [Appl. Phys. Lett. 87, 032102 (2005)]
  Appl. Phys. Lett. 89, 126101 (2006)

• W. Mönch
  Some comments on the determination and interpretation of barrier heights of metal-semiconductor contacts
  Appl. Phys. A 87, 359-366 (2007)

• Winfried Mönch
  On the electric-dipole contribution to the valence-band offsets in semiconductor-oxide heterostructures
  Appl. Phys. Lett. 91, 042117 (2007)

• W. Mönch
  On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states
  Appl. Phys. Lett. 93, 172118 (2008)

• W. Mönch
  Interface-induced gap states and band-structure lineup at TiO₂ heterostructures and Schottky cantacts
  J. Appl. Phys. 107, 013706 (2010).

• Winfried Mönch,
  Branch-point energies and the band-structure lineup at Schottky contacts and heterostructures.
  J. Appl Phys. 109, 114724 (2011).

• Winfried Mönch,
  On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts
  J. Appl Phys. 111, 073706 (2012).